2.5-Ampere AlGaN/GaN HFETs on Si Substrates with Breakdown Voltage

2.5-Ampere AlGaN/GaN HFETs on Si Substrates with Breakdown Voltage > 1,250V Tsung-Ting Kao,1, Cheng-Yin Wang1, Shyh-Chiang Shen1, Dev Alok Girdhar2, and Francois Hebert2 1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 2Intersil Corporation, Milpitas, CA POC: tkao6@gatech.edu, Phone: 404-385-8327 Keywords: GaN HFETs, Si substrate, high voltage
Abstract We report the performance of high-voltage AlGaN/GaN heterojunction field effect transistor (HFET) switches grown on Si substrates. Measured I-V characteristics of 10-mm-wide GaN HFETs showed an off-state blocking voltage > 1,250 V

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