J.R. LaRoche, W.E. Hoke, and T.E. Kazior Raytheon Integrated Defense Systems, Andover, Massachusetts, USA
D. Lubyshev, J. M. Fastenau, and W. K. Liu
IQE Inc., Bethlehem, Pennsylvania, USA
M. Urteaga, W. Ha, J. Bergman, M. J. Choe, and B. Brar Teledyne Scientific Company, Thousand Oaks, California, USA
M. T. Bulsara and E. A. Fitzgerald
Department of Materials Science and Engineering, Massachusetts Institute of Technology
Cambridge, Massachusetts, USA
D. Smith, D. Clark and R. Thompson
Raytheon Systems Limited, Glenrothes, Fife, United Kingdom
C. Drazek and N. Daval
SOITEC, Bernin, France
L. Benaissa and E. Augendre
CEA-LETI, MINATEC, Grenoble, France
Keywords: CMOS, HBT, SOLES, differential, amplifier, lattice
ABSTRACT
The growth, fabrication, and integration of IIIV heterojunction bipolar transistors (HBTs) with Si CMOS on SOLES (Silicon-on-Lattice Engineered Substrate) has been demonstrated with first pass, first wafer success. DC and RF Measurements of HBTs on SOLES, and a differential amplifier comprised of HBTs integrated with Si CMOS are presented.