Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers

P. Kurpas, A. Wentzel, B. Janke, C. Meliani, W. Heinrich, J. Würfl

Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff -Str. 4, 12489 Berlin, Germany Phone: +49-30-6392-2674, fax: +49-30-6392-2685, e-mail: paul.kurpas@fbh-berlin.de

Keywords: fast Schottky diode, GaInP/GaAs HBT, power HBT, integrated circuits, switch-mode amplifier

ABSTRACT

Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode´s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstrated. On the other hand, short diode´s recovery time of 9 - 12 ps was evaluated. Thus, the integrated HV-HBTs and Schottky diodes are well suited for high speed MMICs for power applications. Novel switched-mode power amplifier circuits were fabricated yielding a digital output power of 5.4 W with very high collector efficiency of 92% at data rates of 1.8 Gbps.

12.2.PDF                      Return to TOC