Accurate Channel Temperature Measurement in GaN-based HEMT Devices and its Impact on Accelerated Lifetime Predictive Models
B. Claflina,b, E. R. Hellera,b, B. Winninghamc, J. E. Hoelschera,b, M. Bellottc, K. Chabakc,
A. Crespoc, J. Gillespiec, V. Millerc, M. Trejoc, G. H. Jessenc, and G. D. Viac
a Materials and Manufacturing Directorate, AFRL/RXPS, WPAFB, OH 45433 b Semiconductor Research Center, Wright State University, Dayton OH 45435 c Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 Phone: (937) 904-9937, email: email@example.com
Keywords: HEMT, infra-red thermal imaging, Raman, photoluminescence, thermography, electro-thermal modeling
Measurements of the channel temperature in a GaNbased HEMT device under DC bias are presented using IR thermal imaging, as well as μ-Raman and μ-PL spectroscopies for the same device. Comparison of the measured temperature values with simulated profiles from a full Sentaurus electro-thermal model can be used to validate the model and fine tune the materials-related simulation parameters. In addition, this comparison provides an estimate of the temperature error associated with each of these techniques and demonstrates the strengths and limitations of each method.