Heinrich Wolf1, Horst Gieser1, Karlheinz Bock1,2
1Fraunhofer-Institut Zuverlässigkeit und Mikrointegration (IZM-M/PS/ATIS Analysis and Test of Integrated Systems), Hansastr. 27d, 80686 Munich, Germany, Tel.: ++49-89-54759-531, Fax.: ++49-89-54759-100, email: email@example.com 2TU Berlin, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
Keywords: ESD, Transmission Line Pulsing, high current characteristic, breakdown
This work describes the application of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behavior of the DUT. As an example, the high current behavior of a broad band amplifier circuit is analyzed. Furthermore the breakdown behavior of MIM capacitors fabricated in a GaAs technology is investigated.