Wafer-fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and VBR ~ 35 V

Chuanxin Lian and Huili Grace Xing
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA
Email: clian@nd.edu; Phone: 1-574-6315498
Keywords: HBT, wafer fusion, GaAs, GaN

Abstract
AlGaAs/GaAs/GaN HBTs have been fabricated by wafer fusion at various fusion temperatures 450 – 550 ºC. The best current gain of ~ 20 was achieved in HBTs fused at 450 ºC for 2 h, and the HBT breakdown voltage was measured to be ~ 35 V (~ 3 times that of the as-grown AlGaAs/GaAs HBTs), a result of mitigation of base degradation and fusion interface barrier. These result  indicate that wafer fusion is a promising technique to fabricate high-speed power transistors by combining the superb injector AlGaAs/GaAs and the wide bandgap GaN collector.
 
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