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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2007 On-line Digest Table of Contents
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01a
Ralph Quinsey CEO TriQuint Semiconductor
01b
Wolfgang Bösch CTO Filtronic IP, Shipley UK,
01c
David Danzilio EMCORE Photovoltaics
01d
Steven Mahon and Robert Aigner,TriQuint Semiconductor
02a
G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor
02b
J.M. Liu, Y.S. Lu, X.S. Pang Wireless Packaging System Laboratory, Technology Solutions Organization, Freescale Semiconductor (China) Ltd. 
02c
A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder
Brewer Science, Inc., EV Group Inc., 
02d
C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM
03a
L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems
03b
T. S. Low, K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, and D. C. D’Avanzo
A. Wibowo, S. Hassler, N. Pan, G. Hillier, and Hani Badawi, Morris Young, Weiguo Liu  Agilent Technologies, Inc. MicroLink Devices, Inc. www.mldevices.com 
AXT, Inc. www.axt.com ,
03c
F. Bourgeois, M. Lanz, G.Jonsson, H. Stieglauer and D. Behammer, United Monolithic Semiconductors
03d
Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano
03e
M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis, H.H. Wills Physics Laboratory, University of Bristol, QinetiQ Ltd
04a
Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor
04b
Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois
04c
Hyoung-Sub Kim, I.Ok, M. Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikov, W. Tsai, V. Tokranov, M.Yakimov, S. Oktyabrsky, and Jack C. Lee.  Intel Corporation, The University at albany-SUNY, The University of Texas Austin
04d
J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, M. E. Aumer, H. G. Henry, D. B. Thomson, and D. P. Partlow Northrop Grumman Electronic Systems
04e
Benjamin F. Chu-Kung, Kurt Cimino, Yu-Ju Chuang, Mark Stuenkel, and Milton Feng Department of Electrical and Computer Engineering · University of Illinois Micro and Nanotechnology Laboratory,A. Wibowo, G. Hillier, and N. Pan Microlink Devices
05a
S. Singhal, A.W. Hanson, A. Chaudhari, P. Rajagopal, T. Li, J.W. Johnson, W. Nagy, R. Therrien, C. Park, A.P. Edwards, E.L. Piner, K.J. Linthicum, I.C. Kizilyalli Nitronex Corporation
05b
K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp
05c
Toshihide Kikkawa, Masahito Kanamura, toshihiroOhki, Kenji Imanishi,Kozo Makiyama, Naoya Okamoto, Naoki Hara and Kazukiyo Joshin, Fujitsu Limited and Fujitsu Laboratories Ltd.
05d
F. Yamaki, K. Ishii, M.Nishi, H. Haematsu, Y. tateno and H. Kawata, Eduyna Devices Inc
05e
A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC
06a
Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.
06b
Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,
06c
S. R. Vangala, H. Dauplaise, C. Santeufemio, C. Lynch, P. Alcorn, L.P. Allen, G. Dallas, K. Vaccaro, D. Bliss, and W. D. Goodhue, University of Massachusetts, Air Force Research Laboratories, Hanscom/SNHC AFB, Galaxy Compound Semiconductors, Inc., 
06d
R. Khanna(1)*, W.T. Lim, L. Stafford, S.J. Pearton, Jae-Soung Park, Ju-Il Song, Young-Woo Heo, Joon-Hyung Lee, and Jeong-Joo Kim, Department of Materials Science and Engineering, University of Florida, Kyungpook National University
07a
B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,
07b
Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives
P. Doering, A. Genis, and R. Linares Apollo Diamond, Inc.,
07c
J. Zimmer and G. Chandler sp3 Diamond Technologies Inc.,
07d
D. Francis¹, J. Wasserbauer¹, F. Faili¹, D. Babić¹, F. Ejeckam¹, W. Hong², P. Specht², E. Weber² ¹Group4 Labs, LLC, 1600 Adams Dr., Menlo Park, CA 95025; daniel_francis@group4labs.com, (650) 688 5760 ²Department of Materials Science and Engineering, University of California, Berkeley
07e
T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, J.Kim, J. Lin, P. Bove, H. Lahreche , J. Thuret and R. Langer, Department of Chemical Engineering, University of Florida, Picogiga International SAS
08a
P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology
08b
Chunfen Han*, Qi Liu and Douglas G. Ivey Department of Chemical and Materials Engineering, University of Alberta
08c
M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology
08d
Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP
08e
Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc. 
09a
P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors
09b
Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones
Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation
09c
David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans,
Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor
09d
Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock, Mike Sun, Kevin Stevens, and Ravi Ramanathan, Skyworks Solutions, Inc., Kopin Corporation
09e
H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot, United Monolithic Semiconductors GmbH
10a
M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.
10b
M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions
10c
Wu-Sheng Shih1, Jiro Yota2, Hoa Ly2, Ketan Itchhaporia1, and Alex Smith, Brewer Science, Inc., Skyworks Solutions, Inc.,
10d
Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc., 
10e
Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers, Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois 
11a
Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.
11b
Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.
11c
Victor Veliadis, Megan McCoy, Ty McNutt, Harold Hearne, Li-Shu Chen, Gregory DeSalvo, Chris Clarke, Bruce Geil, Dimos Katsis, Skip Scozzie, Northrop Grumman Advanced Technology Laboratory, U.S. Army Research Laboratory,
11d
Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company
12a
P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall
University of Notre Dame
12b
Yanning Sun,S. J. Koester, E. W. Kiewra, J. P. de Souza, N. Ruiz, J. J. Bucchignano, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J.- P. Locquet, M. Sousa, R. Germann, IBM Thomas J. Watson Research Center, IBM Zürich Research Laboratory
12c
M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc., 
13a
William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,
13b
T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit
TriQuint Semiconductor
13c
C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang,
M. C. Tu and Y. C. Wang , WIN Semiconductors Corporation
13d
Ravi Ramanathan, Mike Sun, Peter J. Zampardi, Andre G. Metzger, Vincent Ho, Cejun Wei, Peter Tran, Hongxiao Shao, Nick Cheng, Cristian Cismaru, Jiang Li, Shiaw Chang, Phil Thompson, Mark Kuhlman, Kenneth Weller , Skyworks Solutions, Inc.,
14a
Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD
14b
T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor
14c
J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions
14d
Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC
14e
Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor
15a
Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)
15b
Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.
15c
InJo Ok, H.Kim, M.Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikovl, W. Tsai 1,
V. Tokranov2, M. Yakimov2, S. Oktyabrsky2, and Jack C. Lee, Intel Corporation, The University of Texas, Austin
15d
C. Lee, J. Jimenez, U. Chowdhury, M. Kao, P. Saunier, T. Balistreri, A. Souzis, S. Guo, TriQuint Semiconductor
15e
James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA 
15f
David J. Meyer, Joseph R. Flemish, and Joan M. Redwing
Department of Materials Science and Engineering,
The Pennsylvania State University 
15g
Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation
15h
Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology
15i
K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC
15j
Y. C. Wu, E. Y. Chang, Senior Member, IEEE, Y. C. Lin and W. C. Wu, National Chiao-Tung University