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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2006 On-line Digest Table of Contents
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1.A
Oded Tal, Ariel Meyuhas, MAX International Engineering Group
1.B
Abstract 
John Zingaro, Northrop Grumman ES
1.C
Robert Walker, eLite Optoelectroics, Inc., YEBY Associates, LLC
2.A
Brian Daly, Skyworks Solutions, Inc
2.B
J. Bellaïche, P. Baudet, S. Demichel, M. Renvoisé, H. Maher, J. F. Pautrat, M. G Périchaud, S. Lafont, OMMIC
2.C
L. Gunter, D. Dugas, S. Yang, P. Seekell, M. Gerlach, J. Diaz, J. Lombardi, W. Hu, P.C. Chao, K. Nichols, W. Kong, B. Golja and K.H.G. Duh, BAE Systems
2.D
C. Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan, P. Saunier, D. Wohlert, TriQuint Semiconductor
2.E
Daniel J. Le Saux, Skyworks Solutions, Inc.
3.A
H. Ueda1, M. Sugimoto2, T. Uesugi1, and T. Kachi1, 1Toyota Central R&D Lab, Inc., 2Toyota Motor Corp.
3.B
Mark Rosker1,  Harry Dietrich2, Chris Bozada4, Alfred Hung3, and Glen David Via4, 1Defense Advanced Research Projects Agency / Microsystems Technology Office , 2Office of Naval Research, 3Army Research Laboratory, 4Air Force Research Laboratory
3.C
Yasushi Nanishi1, H. Miyamoto2, A. Suzuki1, H. Okumura3, and N. Shibata2, 1Ritsumeikan University, 2R&D Association for Future Electron Devices, 3National Institute of Advanced Industrial Science and Technology
3.D
Abstract 
G. Gauthier1, Francois Reptin2, 1Thales Airborne Systems, 2DGA/DET/PCO
4.A
Bettina Weiss, SEMI
4.B
 
Roy T. Blunt, IQE (Europe) Ltd.
4.C
E.M. Rehder, P. Rice, K.S. Stevens. C. R. Lutz, Kopin Corp.
4.D
A. D. Hanser1, L. Liu1, E. A. Preble1, D. Tsvetkov1, M. Tutor1, N. M. Williams1, K. Evans1, Y. Zhou2, D. Wang2, C. Ahyi2, C.-C. Tin2, J. Williams2, M. Park2, D. F. Storm3, D. S. Katzer3, S. C. Binari3, 1Kyma Technologies, Inc., 2Auburn University, 3Naval Research Laboratory
4.E
R. Langer1, B. Faure2, A. Boussagol2, P. Bove1, H. Lahreche1, A. Wilk1, J. Thuret1, F. Letertre2, 1Picogiga International, 2Soitec
5.A
Nien-Tsu Shen, Skyworks Solutions, Inc.
5.B
Statistical Quality Control of Wafer Level DC Die Sort Test
 
Y. Z. Wang, R. S. Persaud, R. C. Salvador and D. J. Troy,  Anadigics, Inc
5.C
Gergana I. Drandova, John M. Beall, Kenneth D. Decker, TriQuint Semiconductor
5.D
X. Zeng, M. Barsky, J. Uyeda, D. Farkas, F. Yamada, M. Biendenbender, D. Eng, J. Wang, R. Lai, Northrop Grumman ST
5.E
H. C. Cramer, J. D. Oliver, R. J. Porter, Northrop Grumman ES
6.A
Satoshi Horiuchi, Katsuji Matsumoto, Mariko Sakachi, Tsuyoshi Ooki, Hideko Nakamura, Kiwamu Adachi, Mamoru Shinohara, Sony Corp.
6.B
Fabian Radulescu1, Jinhong Yang1, Paul Miller1, Ron Herring1, Chi-Fung Lo2, Wolfgang Liebl3, 1TriQuint Semiconductor, 2Praxair Surface Technology-MRC, 3Infineon Technologies AG
6.C
Lei Ma, K. Fareen Adeni, Chang Zeng, Yawei Jin, Krishnanshu Dandu, Yoganand Saripalli, Mark Johnson, Doug Barlage, North Carolina State University
6.D
S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University
7.A
Jacco L. Pleumeekers, Richard P. Schneider, Jr., Atul Mathur, Sheila K. Hurtt, Peter W. Evans, Andrew G. Dentai, Charles H. Joyner, Damien J. H. Lambert, Sanjeev Murthy, Ranjani Muthiah, Johan Baeck, Mark J. Missey, Randal A. Salvatore, Mehrdad Ziari, Masaki Kato, Radhakrishnan Nagarajan, Fred A. Kish, Infinera Corp.
7.B
Karthik Rajagopalan, Ravi Droopad, Jon Abrokwah, and Matthias Passlack, Freescale Semiconductor
7.C
Jon Abrokwah, Sergio Pacheco, Shun-Meen Kuo, Li Li, Robert Bettiga, Philip Bowles, Gilles Montoriol, Freescale Semiconductor
7.D
Yue-ming Hsin1, Yu-An Liu1, Che-ming Wang1, Wei-kuo Huang1, Tsung-Jung Yeh2, 1Taiwan National Central University, 2WIN Semiconductor
8.A
Victoria Williams, Harold Isom, Thomas Nagle, Cary
 
Sellers, Sean Hillyard, Samuel Roadman, Sumir Varma, TriQuint Semiconductor
8.B
L. Luu-Henderson, L. Rushing, and S. Tiku, Skyworks Solutions, Inc.
8.C
Mark Müller, Rene Hendriks, H. P. Chall, Advanced Laser Separation International
8.D
Sean Green, Delphine Perrottet, Bernold Richerzhagen, Synova-SA
9.A
Mike Sun1, Pete Zampardi1, R. Ramanathan1, A.G. Metzger1, C. Cismaru1, Vincent Ho1, L Rushing1, K S. Stevens2, M. Chaplin2, R. E. Welser2,  1Skyworks Solutions, Inc.,  2Kopin Corp.
9.B
Mohsen Shokrani, Kezhou Xie, Boris Gedzberg, Wojciech Krystek, Prabhu Mushini, Aditya Gupta, Pat Fowler, William Peatman, Anadigics, Inc.
9.C
Y. Zeng1, H. G. Liu1, N. G. Tao1, C. R. Bolognesi1, W. Tang2, W. Zhou2, K. M. Lau2, 1Simon Fraser University, 2Hong-Kong University of Science and Technology
9.D
Benjamin F. Chu-Kung1, Shyh-Chiang Shen2, William Snodgrass1, and Milton Feng1, 1University of Illinois Department of ECE, 2Georgia Institute of Technology
12.A
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin, Fujitsu Laboratories Ltd.
12.B
Scott Sheppard, Bill Pribble, R. Peter Smith, Adam Saxler, Scott Allen, Jim Milligan, and Ray Pengelly, Cree Inc.
12.C
A. Sarua1, Hangfeng Ji1, M. Kuball1, M.J. Uren2, T. Martin2, K. P. Hilton2, R. S. Balmer2, 1University of Bristol, 2QinetiQ,  Ltd
12.D
Eizo Mitani, Hitoshi Haematsu, Shigeru Yokogawa, Junichiro Nikaido, and Yasunori Tateno, Eudyna Devices Inc.
12.E
M. J. Drinkwine, T. Winslow, D. Miller, D. Conway, B. Raymond,  M/A-COM,  Inc.
13.A
Suzanne Combe, John Cullen, Matthew O’Keefe, Filtronics ICS
13.B
J. Riege, T. Nguyen, H. Knoedler, B. Darley, R. Clark, N. Ebrahimi, S. Mony, S. Tiku, Skyworks Solutions, Inc.
13.C
Nasim Morawej1, Douglas G. Ivey1, and Siamak Akhlaghi2, 1University of Alberta, 2Micralyne Inc.
13.D
S. E. Roadman, C. Youtsey, C. Sellers, and H. S. Isom, TriQuint Semiconductor
13.E
Jason Fender and Terry Daly, Freescale Semiconductor
14.A
Anant Agarwal and Sei-Hyung Ryu, Cree Inc.
14.B
Victor Veliadis, Li-Shu Chen, Megan McCoy, Ty McNutt, Eric Stewart, Robert Sadler, Alfred Morse, Steve Van Campen, Chris Clarke, Gregory DeSalvo, Northrop Grumman ES
14.C
Bart Van Zeghbroeck1,2, Ivan Perez2, Feng Zhao1,2 and John Torvik2, 1University of Colorado, 2Advanced Power Technology
14.D
Chen Tangsheng, Jiao Gang, Li Zhonghui, Li Fuxiao, Shao Kai, Yang Naibin, Nanjing Electronic Devices Institute
14.E
Philippe Roussel, Yole Developpement
15.A
C. Monier, A. Cavus, R. S. Sandhu, A. Oshiro, D. Li, E. Kaneshiro, D. Matheson, B. Chan, and A. Gutierrez-Aitken, Northrop Grumman ST
15.B
Jonathan B. Hacker1, Joshua Bergman1, Gabor Nagy1, Gerard Sullivan1, C. Kadow2, H.-K. Lin2, A. C. Gossard2, Mark Rodwell2, B. Brar1, 1Rockwell Scientific, 2UC Santa Barbara
15.C
Chak-wah Tang, Jiang Li, Kei May Lau, Kevin J. Chen, Hong Kong University of Science and Technology
15.D
Man Ni1, P. Fay1, N. Pan2, 1University  of Notre Dame, 2MicroLink Devices
15.E
Dae-Hyun Kim and Jesús A. del Alamo, Massachusetts Institute of Technology (MIT)
16.A
Thorsten Saeger, Tertius Rivers, Dorothy Hamada, Fabian Radulescu, Corey Jordan, Martin J. Brophy, TriQuint Semiconductor
16.B
Yu-Ju Chuang1, J. W. Lai1, Kurt Cimino1, Milton Feng1, Minh Le2, Raymond Milano2, R.. B. Elder3, Frank Strolli3, 1Dept of ECE Univ of Illinois, 2Vitesse Semiconductor, 3BAE Systems
16.C
James D. Oliver1 and Russ Kremer2, 1Northrop Grumman ES, 2Freiberger USA
16.D
A. Smith1, J. Moore2, and B. Hosse3, Brewer Science, Inc., 2DAETEC, LLC, 3RF Micro Devices
16.F
S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University
16.G
M. Meeder, M. Fresina, D. Limanto, M. Tenberge, W. Wohlmuth, Y. Tretiakov, and K. Sheek, RF Micro Devices
16.H
Manufacture of Mesa-Type and Air-Bridge Gate In0.5Al0.5As/In0.5Ga0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with InxAl1-xAs Graded Buffer Layers
M. K. Hsu1, H. R. Chen2, W. T. Chen1, G. H. Chen1, C. C. Su2, and W. S. Lour1, 1National Taiwan Ocean University, 2National University of Kaohsiung
16.I
Aroonchat Chatchaikarn1, Wing Yau2, Yuefei Yang2,  and G. P. Li1, 1UC Irvine, 2GCS, Inc. 
16.J
Hooman Kazemi, Lan Tran, Don Deakin, Jon B. Hacker, Chanh Nguyen, Rockwell Scientific 
16.K
V. Mosser1, A. Kerlain1, Y. Haddab1, R. Morton2, Martin J. Brophy2, 1Itron, Inc., 2TriQuint Semiconductor