Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications

Aroonchat Chatchaikarn, Wing Yau*, Yuefei Yang*, and G.P. Li

Integrated Nanosystems Research Facility, University of California, Irvine, CA 92697 and Global Communication Semiconductors, Inc*, Torrance, CA 90505, email: achatcha@uci.edu and gpli@uci.edu

Keywords: InGaP/GaAs HBT, MMIC, Distributed Amplifier, Manufacturability

Abstract

In this paper, the attributes of HBT device parameters to the performance of distributed amplifiers are evaluated. In addition, the guidelines for optimizing InGaP/GaAs HBT technology for broadband amplifier designs are proposed.

and a 1% duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W).

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