Highly Reliable GaAs Planar Airbridged Schottky Diodes for Flight Qualified Millimeter-wave Circuits

Hooman Kazemi, Lan Tran, Don Deakin, Jon B Hacker and Chanh Nguyen

Rockwell Scientific Company

1049 Camino Dos Rios, Thousand Oaks, CA 91360

Tel: 805 373 4905

Keywords: Schottky diodes, Millimeter wave mixers, detectors , frequency multipliers, flight qualified components

Abstract

A GaAs planar airbridged Schottky (PAS) diode process has been developed for insertion in high performance circuits at millimeter-wave frequencies and beyond. The PAS diodes have shown a very low resistance, accompanied by low capacitance values resulting from the small anode geometry and optimization of the diode resistance. The process is developed on 4” GaAs wafers and show diode yield of >95% per wafer. The reliability of the junction is also discussed with an elevated 200 degrees thermal cycle test over a period of 24 hours showing no change in diode parameters such as ideality factor and breakdown voltage.

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