Manufacture of Mesa-Type and Air-Bridge Gate In0.5Al0.5As/In0.5Ga0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with InxAl1-xAs Graded Buffer Layers
1 Department of Electrical Engineering,
2 Department of Electrical Engineering,
*Corresponding author. E-mail address: firstname.lastname@example.org
The air-bridge- and mesa-type of Metamorphic High Electron Mobility Transistors (MHEMTs) with inverse step InxAl1-xAs graded buffer layer were successfully manufactured and the kink-effect also discussed. For both types (air-bridge / mesa), the experimental (IDSS), maximum transconductance (at VGS=0 V, VDS=2 V), gate-drain leakage current at VGD=6 V, unit current gain cut-off frequency, and maximum oscillation frequency are of 335/325 (mA/mm), 325/370 (mS/mm), 8.5/15.5 (mA/mm), 17/14.5 (GHz), and 26.4/24 (GHz), respectively.