Manufacture of Mesa-Type and Air-Bridge Gate In0.5Al0.5As/In0.5Ga0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with InxAl1-xAs Graded Buffer Layers

 

M. K. Hsu1, H. R. Chen2, W. T. Chen1, G. H. Chen1, C. C. Su2, and W. S. Lour1,*

 

1 Department of Electrical Engineering, National Taiwan Ocean University,

2 Peining Road, Keelung, TAIWAN, Republic of China

2 Department of Electrical Engineering, National University of Kaohsiung,

700 Kaohsiung University Road, Kaohsiung, TAIWAN Republic of China

*Corresponding author. E-mail address: wslo@mail.ntou.edu.tw

 

Keywords: MHEMT, Kink Effect, Bell Shape

 

 

Abstract

     The air-bridge- and mesa-type of Metamorphic High Electron Mobility Transistors (MHEMTs) with inverse step InxAl1-xAs graded buffer layer were successfully manufactured and the kink-effect also discussed. For both types (air-bridge / mesa), the experimental (IDSS), maximum transconductance (at VGS=0 V, VDS=2 V), gate-drain leakage current at VGD=6 V, unit current gain cut-off frequency, and maximum oscillation frequency are of 335/325 (mA/mm), 325/370 (mS/mm), 8.5/15.5 (mA/mm), 17/14.5 (GHz), and 26.4/24 (GHz), respectively.

 

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