SiC, sapphire and GaN materials
status into Opto and RF businesses
Dr. Philippe ROUSSEL
YOLE DEVELOPPEMENT, 45 rue Sainte Genevieve, 69006 LYON, FRANCE.
firstname.lastname@example.org Tel: +33 472 83 01 86
Keywords: SiC, GaN, Sapphire, LED, Laser Diodes, 3G, WiMax, base stations
With more than 2.8 million 2” equivalent substrates consumption in 2005, LED
business is driving 90% of SiC material and is representing about 2.5 million
sapphire wafers. The emergence of bulk single crystal GaN will certainly take
market shares over SiC and sapphire substrates, especially for high end devices
like ultra HB-LEDs and blue laser diodes.
In RF business, GaN HEMT and SiC MESFET are both competing for the base
stations segment, targeting 3G, WCDMA, WiMax or even defense applications.
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