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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2004 On-line Digest Table of Contents

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1.1	State of the Compound Semiconductor Industry	Abstract
1.2	Integrated Microsystems: The Next Technology Transition	Abstract
1.3	High Bandwidth Devices: Faster Materials versus Nanoscaled Si and SiGe	Abstract

2.1	Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology	Abstract

2.2	A “Snapshot” of AlGaN/GaN HEMT State-of-the-Technology	Abstract

2.3	High Performance GaN HEMTs on 3-inch SI-SiC Substrates	Abstract

2.4	GaN HFET digital circuit technology	Abstract

2.5	Diamond	Abstract
	A New Materials Base for Future Ultra High Power RF Electronics
3.1	A Field Plate Device by Self-Aligned Spacer Process	Abstract

3.2	Sub 100nm T-Gate Uniformity in InP HEMT Technology	Abstract

3.3	Interlayer and Intershot Charging-Induced Pattern Distortion on GaAs Substrates Exposed with a High Throughput Shaped Beam Electron Beam Lithography System	Abstract

3.4	0.15mm In0.4GaAs/In0.4AlAs Metamorphic HEMT’s (M-HEMT’s) Using A Novel Triple Shaped Gate Stgructure Assisted By PMGI Resist	Abstract

3.5	Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery	Abstract
4.1	Commercial Applications for GaAs Millimeter Wave MMICs	Abstract

4.2	Development and Transition-to-Production of a High-volume Ka-Band	Abstract
	SATCOM Outdoor Unit (ODU) Transmit Module
4.3	0.1mm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications	Abstract

4.4	Manufacturable A1Sb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits	Abstract

5.1	Transfer of GaAs pHEMT Technologies from Infineon to TriQuint	Abstract

5.2	Manufacturing Excellence, Still Achievable in the US	Abstract

5.3	The Implementation of Autonomous Maintenance	Abstract

5.4	Manufacturing Excellence in a Compound Semiconductor Fabrication Facility	Abstract

5.5	A DOE Approach to Product Qualification For Linear Handset Power Amplifiers	Abstract

6.1	An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTs	Abstract

6.2	Manufacturable GaN HEMP RF Power Technology for Wireless Infrastructure Applications	Abstract

6.3	Low Noise – High Power GaN HEMT Technology for Mixed Mode Applications	Abstract

6.4	Development of a GaN Transistor Process for Linear Power Applications	Abstract

6.5	Balanced AlGaN/GaN-HFET amplifier based on 111-Silicon substrate	Abstract

7.1	A 0.5-mm InGaP Etch Stop Power pHEMT Process Utilizing Multi-Level High Density Interconnects	Abstract

7.2	Multiple Level Plated gold Intgerconnect for III-V Circuits	Abstract

7.3	Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier	Abstract

7.4	GaAs Surface Preparation for Thin Film Deposition Using Sodium Hypochlorite	Abstract

7.5	GaAs Corrosion Under Ohmic Contacts by Electrochemical Oxidation in HBT Device Fabrication	Abstract

8.1	Characterization and Mapping of Crystal Defect in Silicon Carbine	Abstract

8.2	Interferometric Metrology for Thin and Ultra-thin Compound Semiconductor Structures Mounted on Insulating Carriers	Abstract

8.3	Optical Characterization of Radio-Frequency Magnetron-Sputtered Gallium-Arsenide Films under Non-Uniform Thickness Conditions	Abstract

8.4	Contactless Electrical Characterization of HEMP Epitaxial Structures and Devices	Abstract

8.5	Gate Electrode Formation Process Optimization in a GaAs FET Device	Abstract

8.6	Device Zoo: A Smart tool for Device Performance Optimization	Abstract

8.7	A Novel Scheme for the Deposition and Spectroscopic Ellipsometry Characterization of PecVD, Silicon-based, Dielectric Layers for Optoelectronics Applications	Abstract

8.8	GaAs HBT wet etch processing using reclaimed chemicals	Abstract

8.9	A Reproducible, High Yield, Robust Wet Etch Etch-Stop Process Using Organic Acid – Peroxide Solutions	Abstract

8.1	High Temperature Resistant Adhesive for Wafer Thinning and Backside Processing	Abstract

8.11	Low-k Underfill Using Spray Coat Technology	Abstract

8.12	Through-wafer Via Etch Throughput Improvement in a GaAs Semiconductor Device	Abstract

8.13	1/f Noise Characteristics and High-Frequency Noise Performance of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs PHEMTs	Abstract

8.14	Noise and Large-Signal Characterization of a Thin-film MHEMT Feedback Amplifier in Multilayer MCM-D Technology	Abstract

8.15	A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement	Abstract

8.16	InAlAs/GaAsSb/InP DHBTs grown by Production MBE	Abstract

8.17	ecR Based Chemically Assisted Plasma Etching of GaAs	Abstract

8.18	Study of Reactive Ion Etching Process to Fabricate Reliable Via-Hole ground Connections in GaAs MMICs	Abstract

8.19	Application of Electrical CD Measurement Methodology for InGaP/GaAs HBT Production	Abstract

10A.1	Thermal Management of High Power Devices	Abstract

10A.2	Trends in RF & Wireless Packaging	Abstract

10A.3	RF SiP Technology: Integration and Innovation	Abstract

10A.4	Evaluation of High Temperature Overmold Compounds for Manufacturing of Laminate Based Leadfree System in Package	Abstract

10A.5	Plasma Etching of Thick BCB Polymer Films for Flip Chip Bonding of Hybrid Compound Semiconductor-Silicon Devices	Abstract

10B.1	Very Large Scale Electro-optical Device Process and Yield Challenges	Abstract

10B.2	Development of RM3 Technololgy to Integrate P-i-N Photodiodes on Si-CMOS for Optical Clock Distribution	Abstract

10B.3	Improvement of Wafer Bonding Processing HB-LED with Low-Temperature-Grown Compound Semiconductors as Adhesive Materials	Abstract

10B.4	Toward the Development of Hybrid MEMS Tunable Optical Filters and Lasers	Abstract

10B.5	MMIC Compatible High Performance Lateral Deflection RF MEMS Switches	Abstract

10B.6	Characterization of Loading in the Plasma Etching of HgCdTe and Related II-VI Materials for Infrared Focal Plane Array Fabrication	Abstract

11A.1	X-ray of High Order Planes, Pathway for HBT Control	Abstract

11A.2	Junction Temperature and Thermal Resistance of Ultrafast Sub-micron InP/InGaAs SHBTs	Abstract

11A.3	Application of IVS Overlay Measurement to Wafer Deformation Characterization Study	Abstract
11A.4	Investigatons on Initial Beta Drift During Reliability Test for MOCVD Grown C-doped InGaP/GaAs HBTs	Abstract
11A.5	Walkout in PHEMTs: Origin and Relation to Device Structure	Abstract
11B.1	Wide Bandgap Semiconductor Substrates: Current Status and Future Trends	Abstract
11B.2	Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide	Abstract
11B.3	Improvement of Substrate Related Uniformity of AlGaN/GaN HEMP Epi Wafers on f3” Sapphire and SiC Substrates Grown by Multi-charged Large MOVPE Reactor	Abstract
11B.4	Reproducible and Highly Uniform Growth of GaN by MOCVD and MBE	Abstract
11B.5	Migration Enhanced Metalorganic Chemical Vapor Despsition of AlN/GaN/InN based heterostructures	Abstract
12.1	Uniform InP/InGaAs SHBT Fabrication Using ICP emitter Etching on 4-inch Wafers	Abstract
12.2	Low Temperature High Density Highly Uniform SicN4 Technology for Passive and Active Devices in MMMIC Applications	Abstract
12.3	Continuous Defectivity Improvements and Impact on High Density Metal-Insulator-Metal	Abstract
12.4	Characterization & Optimization of Low Stress PecVD Silicon Nitride for Production GaAs Manufacturing	Abstract
12.5	Oxygen Plasma Photoresist Strip in High Valume HBT Production	Abstract
12.6	Novel Via Planarization Scheme for High Resolution Backside Wafer Processing	Abstract
13.1	Advanced InP Heterojunction Bipolar Transistors with Implanted Subcollector	Abstract
13.2	Narrow-Band-Gap-HBT Technology for Low-Power, High-Speed Applications	Abstract
13.3	Low Turn-on voltage InGaP/GaAsSb/GaAs DHBT Grown by MOCVD	Abstract
13.4	Observations of Current Blocking in InP/GaAsSb DHBTs	Abstract
13.5	Recombination Investigation of InGaP HBT’s	Abstract
13.6	Cbc Reduction in Si-implanted Subcollector HBTs	Abstract

GaAs ManTech On-Line Search This will allow you to search our On-Line Digest Paper Abstracts.

GaAs ManTech On-Line Search
This will allow you to search our On-Line Digest Paper Abstracts.