Conference

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2004 On-line Digest Table of Contents

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1.1	State of the Compound Semiconductor Industry	Abstract
1.2	Integrated Microsystems: The Next Technology Transition	Abstract
1.3	High Bandwidth Devices: Faster Materials versus Nanoscaled Si and SiGe	Abstract
2.1	Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology	Abstract
2.2	A “Snapshot” of AlGaN/GaN HEMT State-of-the-Technology	Abstract
2.3	High Performance GaN HEMTs on 3-inch SI-SiC Substrates	Abstract
2.4	GaN HFET digital circuit technology	Abstract
2.5	Diamond A New Materials Base for Future Ultra High Power RF Electronics	Abstract
3.1	A Field Plate Device by Self-Aligned Spacer Process	Abstract
3.2	Sub 100nm T-Gate Uniformity in InP HEMT Technology	Abstract
3.3	Interlayer and Intershot Charging-Induced Pattern Distortion on GaAs Substrates Exposed with a High Throughput Shaped Beam Electron Beam Lithography System	Abstract
3.4	0.15mm In_0.4GaAs/In_0.4AlAs Metamorphic HEMT’s (M-HEMT’s) Using A Novel Triple Shaped Gate Stgructure Assisted By PMGI Resist	Abstract
3.5	Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery	Abstract
4.1	Commercial Applications for GaAs Millimeter Wave MMICs	Abstract
4.2	Development and Transition-to-Production of a High-volume Ka-Band SATCOM Outdoor Unit (ODU) Transmit Module	Abstract
4.3	0.1mm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications	Abstract
4.4	Manufacturable A1Sb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits	Abstract
5.1	Transfer of GaAs pHEMT Technologies from Infineon to TriQuint	Abstract
5.2	Manufacturing Excellence, Still Achievable in the US	Abstract
5.3	The Implementation of Autonomous Maintenance	Abstract
5.4	Manufacturing Excellence in a Compound Semiconductor Fabrication Facility	Abstract
5.5	A DOE Approach to Product Qualification For Linear Handset Power Amplifiers	Abstract
6.1	An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTs	Abstract
6.2	Manufacturable GaN HEMP RF Power Technology for Wireless Infrastructure Applications	Abstract
6.3	Low Noise – High Power GaN HEMT Technology for Mixed Mode Applications	Abstract
6.4	Development of a GaN Transistor Process for Linear Power Applications	Abstract
6.5	Balanced AlGaN/GaN-HFET amplifier based on 111-Silicon substrate	Abstract
7.1	A 0.5-mm InGaP Etch Stop Power pHEMT Process Utilizing Multi-Level High Density Interconnects	Abstract
7.2	Multiple Level Plated gold Intgerconnect for III-V Circuits	Abstract
7.3	Copper Airbridged Low Noise GaAs PHEMT with WN_x as the Diffusion Barrier	Abstract
7.4	GaAs Surface Preparation for Thin Film Deposition Using Sodium Hypochlorite	Abstract
7.5	GaAs Corrosion Under Ohmic Contacts by Electrochemical Oxidation in HBT Device Fabrication	Abstract
8.1	Characterization and Mapping of Crystal Defect in Silicon Carbine	Abstract
8.2	Interferometric Metrology for Thin and Ultra-thin Compound Semiconductor Structures Mounted on Insulating Carriers	Abstract
8.3	Optical Characterization of Radio-Frequency Magnetron-Sputtered Gallium-Arsenide Films under Non-Uniform Thickness Conditions	Abstract
8.4	Contactless Electrical Characterization of HEMP Epitaxial Structures and Devices	Abstract
8.5	Gate Electrode Formation Process Optimization in a GaAs FET Device	Abstract
8.6	Device Zoo: A Smart tool for Device Performance Optimization	Abstract
8.7	A Novel Scheme for the Deposition and Spectroscopic Ellipsometry Characterization of PecVD, Silicon-based, Dielectric Layers for Optoelectronics Applications	Abstract
8.8	GaAs HBT wet etch processing using reclaimed chemicals	Abstract
8.9	A Reproducible, High Yield, Robust Wet Etch Etch-Stop Process Using Organic Acid – Peroxide Solutions	Abstract
8.10	High Temperature Resistant Adhesive for Wafer Thinning and Backside Processing	Abstract
8.11	Low-k Underfill Using Spray Coat Technology	Abstract
8.12	Through-wafer Via Etch Throughput Improvement in a GaAs Semiconductor Device	Abstract
8.13	1/f Noise Characteristics and High-Frequency Noise Performance of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs PHEMTs	Abstract
8.14	Noise and Large-Signal Characterization of a Thin-film MHEMT Feedback Amplifier in Multilayer MCM-D Technology	Abstract
8.15	A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement	Abstract
8.16	InAlAs/GaAsSb/InP DHBTs grown by Production MBE	Abstract
8.17

1.3

2.1

2.2

2.3

2.4

3.1

3.2

3.3

3.4

4.1

4.2

4.3

4.4

5.1

5.2

5.3

5.4

5.5

6.1

6.2

6.3

6.4

6.5

7.1

7.2

7.3

7.4

7.5

8.1

8.2

8.3

8.4

8.5

8.6

8.7

8.8

8.9

8.10

8.11

8.12

8.13

8.14

8.15

8.16

8.17