Application of Electrical CD Measurement Methodology for InGaP/GaAs HBT Production
Yuefei Yang and Daniel Hou
Phone: (310) 530-7274, Fax: (310) 530-7279, Email: firstname.lastname@example.org
Keywords : Electrical Critical Dimension, InGaP/GaAs HBT’s, SPC, PCM
Applications of an electrical CD measurement methodology to monitor the CDs of emitter and base mesas in high-volume InGaP/GaAs HBT production are presented. A calibration method with the introduction of a calibration offset has been developed to provide an accurate CD measurement. The calibration offset was found to vary with photo resist adhesion and epi materials. We have incorporated these measurements into the regular PCM parameter test routines, which makes data collection and analysis much faster and easier than other CD measurement techniques.