Properties,
process control, and characterization of PecVD silicon nitrides for compound
semiconductor devices
Candi S. Cook,1,2
Terry Daly,1 Ran Liu,1 Michael Canonico,1 Martha Erickson,1 Qianghua Xie,1 Rich
Gregory,1 and Stefan
Zollner 1
1 Motorola, Inc.,
Advanced Products Research and Development Lab, MD EL622, 2100 E. Elliot Rd.
Tempe, AZ 85284 2 Arizona State University, Science and Engineering of
Materials Program, Tempe, AZ 85287
(Candi.Cook@motorola.com,
480-413-3652)
Keywords: Silicon Nitride, MIM capacitor, spectroscopic
ellipsometry, Raman spectroscopy
Abstract
We demonstrate the use of
scanning electron microscopy (SEM), transmission electron microscopy (TEM), and
spectroscopic ellipsometry (SE) to determine thickness of silicon nitrides for
compound semiconductor devices, describing in detail the accuracy and
convenience of each technique. In addition to thickness, nitride composition is
another process parameter that needs to be controlled. Therefore, we also
discuss using UV Raman spectroscopy,