Properties, process control, and characterization of PecVD silicon nitrides for compound semiconductor devices

Candi S. Cook,1,2 Terry Daly,1 Ran Liu,1 Michael Canonico,1 Martha Erickson,1 Qianghua Xie,1 Rich

Gregory,1 and Stefan Zollner 1

1 Motorola, Inc., Advanced Products Research and Development Lab, MD EL622, 2100 E. Elliot Rd. Tempe, AZ 85284 2 Arizona State University, Science and Engineering of Materials Program, Tempe, AZ 85287

(Candi.Cook@motorola.com, 480-413-3652)

 

Keywords: Silicon Nitride, MIM capacitor, spectroscopic ellipsometry, Raman spectroscopy

 

Abstract

We demonstrate the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectroscopic ellipsometry (SE) to determine thickness of silicon nitrides for compound semiconductor devices, describing in detail the accuracy and convenience of each technique. In addition to thickness, nitride composition is another process parameter that needs to be controlled. Therefore, we also discuss using UV Raman spectroscopy, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry to measure composition. Finally, we discuss the correlation between electrical parameters (capacitance and breakdown voltage) and the stoichiometry of the silicon nitride used as a dielectric in a metal-insulator-metal capacitor.

 

 

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