Improved
characterization of diffusion in ohmic contacts using Backside SIMS
Patrick Van Lierde,
Chunsheng Tian
Charles Evans &
Associates,
Email: pvanlier@cea.com;
Phone: 1-408-530-3812
Keywords: Backside SIMS, ohmic diffusion, laser diode
Abstract
Secondary Ion Mass
Spectrometry (SIMS) is a proven analytical tool for materials characterization.
Backside SIMS was used successfully to study the diffusion of a Au/Pt/Ti metal
stack on a laser diode as well as to identify unintentional p-type doping. We
will illustrate the excellent control of polishing depth with minimal surface
roughness and excellent planar control.