FABRICATION AND CHARACTERIZATION OF THIN FILM RESISTORS FOR GaAs-BASED POWER AMPLIFIERS

Hong Shen, Jose Arreaga, Ravi Ramanathan, Heather Knoedler, John Sawyer, and Shiban Tiku

Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, CA 91320

Email: hong.shen@skyworksinc.com Tel: (805) 480-4481

 

Keywords: TaN, NiCr, NiV, TFR, resistivity, GaAs

 

Abstract

This paper presents a comprehensive study of sputtered TaN thin film resistor with a low resistivity of only 150 .-cm, its comparison with thin film resistors fabricated by evaporated NiCr and sputtered NiV. Sheet resistance (Rs), temperature coefficient of resistance (TCR), and voltage coefficient of resistance (VCR) were measured using a standard Van Der Pauw (VDP) structure. Thickness was measured by a profilometer as well as cross-section SEM. Biased-drift tests and thermal tests were performed to check the reliability of the thin film resistors.

 

 

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