AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation

Richard Lossy 1 , Nidhi Chaturvedi 1 , Peter Heymann 1 , Klaus Köhler 2 ,

Stefan Müller 2 and Joachim Würfl 1

1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany 2 Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Phone: +49 30 63922630 Fax: +49 30 63922685 e-mail: lossy@fbh-berlin.de

 

Keywords: Gallium nitride, HEMT, power semiconductor

 

Abstract

Results from technology and microwave characterization of large periphery Al-GaN/ GaN power HEMTs on insulating SiC substrates are presented. The influence of processing steps on device performance is discussed. DC characteristics reveal current densities above 1.2 A/mm and extrinsic trans-conductances of 275 mS/mm. A power density of 5.2 W/mm @ 2 GHz is obtained for devices up to 2 mm gate width. The maximum power level achieved on-wafer is 13.8 W @ 2 GHz for 4 mm wide devices. A hybrid amplifier using packaged 4 mm devices delivers 15.1 W.

 

 

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