Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs

A. Crespo, R. Fitch, J. Gillespie, N. Moser, G. Via, M. Yannuzzi

Sensors Directorate, Air Force Research Laboratory

Wright-Patterson AFB, Ohio 45433-7323

(937) 255-4557 ext. 3450

 

Keywords: GaN, HEMT, Ohmic contact

 

Abstract

Optimization of the ohmic contacts in an n-AlGaN high electron mobility transistors (HEMT) structure is presented. The method used was similar to that reported in [1]. In this case four different metal stacks were present in a single wafer. The metal stacks were optimized for different vendors. The results from the optimization are presented.

 

 

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