Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs
A. Crespo, R. Fitch, J. Gillespie, N. Moser, G. Via, M. Yannuzzi
Sensors Directorate, Air Force Research Laboratory
(937) 255-4557 ext. 3450
Keywords: GaN, HEMT, Ohmic contact
Optimization of the ohmic contacts in an n-AlGaN high electron mobility transistors (HEMT) structure is presented. The method used was similar to that reported in . In this case four different metal stacks were present in a single wafer. The metal stacks were optimized for different vendors. The results from the optimization are presented.