Ti/Al/Ni/Au Ohmic
Contacts on AlGaN/GaN HEMTs
A. Crespo, R. Fitch,
J. Gillespie, N. Moser, G. Via, M. Yannuzzi
Sensors Directorate,
Air Force Research Laboratory
Wright-Patterson AFB,
(937) 255-4557 ext.
3450
Keywords: GaN, HEMT, Ohmic
contact
Abstract
Optimization of the ohmic
contacts in an n-AlGaN high electron mobility transistors (HEMT) structure is
presented. The method used was similar to that reported in [1]. In this case
four different metal stacks were present in a single wafer. The metal stacks
were optimized for different vendors. The results from the optimization are
presented.