Papers presented at 2001 Conference

 

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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2001 On-line Digest Table of Contents.



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1.1	Trends in Microsystems for Information Technologies	Abstract
1.2	Applications of Compound Semiconductors in High Data Rate Optic Fiber Communications	Abstract
1.3	Capacity Issues in the Material Supply Chain	Abstract
1.4	RF Power GaAs for Wireless Infrastructure Markets	Abstract
10A.1	Challenges in Rapidly Scaling up Back-side Processing of GaAs Wafers	Abstract
10A.2	Simple Method for Calculating Backside Via Inductance	Abstract
10A.3	Backside Mounting Procedures for Semiconductor Wafer Processing	Abstract
10A.4	Reversible and Permanent Wafer Bonding for GaAs Processing	Abstract
10a.5	Film growth characterization of pulse electrodeposited Au/Sn thin films	Abstract
10b.1	InGaP Makes HBT Reliability a Non-Issue	Abstract
10b.2	A Correlation Between Beta Degradation at Room Temperature versus Beta Degradation at Stress Temperature for Determining the Reliability of HBTs	Abstract
10b.3	Identification of Humidity Related Failure Mechanisms in GaAs Based HBT's	Abstract
10b.4	On The Influence Of Implant Isolation And Base Contact Abnormalities On The Performance And Reliability Of InGaP/GaAs HBTs	Abstract
10B.5	Biased, Backside Failure Analysis Techniques for Small Plastic Packages	Abstract
11.1	Progress in GaAs-Based Metamorphic Technology	Abstract
11.3	High Performance Metamorphic HEMT with 0.25 µm Refractory Metal Gate on 4" GaAs Substrate	Abstract
11.4	Orientation Dependent Characteristics of Recessed-Gate InGaAs/AlGaAs HEMTs	Abstract
12.1	Reduction of Average Cycle Time at a Wafer Fabrication Facility	Abstract
12.2	The Development of a Custom, Paperless Shop Floor Control System for Efficient Manufacturing	Abstract
12.3	Systematics and Key Performance Indicators to Control a GaAs Volume Production	Abstract
12.4	"Overall Resource Effectiveness" the Key for Cycle Time Reduction & Capacity Improvements	Abstract
2.1	Thermal Management and Modeling of GaAs-based HBTs	Abstract
2.2	Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation	Abstract
2.3	Incorporation of an Alloy-Though Passivating-Ledge Process into a Fully Self-Aligned InGaP/GaAs HBT Process	Abstract
2.4	Pathway for HBT Turn-on Voltage Reduction on a GaAs Platform	Abstract
3.1	Cost-Effective Yield Enhancement in 6" Gallium Arsenide Wafer Manufacturing	Abstract
3.2	150mm Through Substrate Interconnect Conversion One Year Later	Abstract
3.3	MOVPE-Grown Enhancement Mode HIGFET on 150mm GaAs	Abstract
3.4	Dicing Improvements: Yield Enhancement, Throughput Increase and Die Size Reduction in M/A-COM's GaAs Fab	Abstract
5.1	Mass Production of Large-Size GaAs Wafers at FREIBERGER	Abstract
5.2	Large Diameter M-HEMT & InP-HEMT Epiwafers Grown in Multicharge MOVPE Reactors	Abstract
5.3	Manufacturing 6" GaAs substrates by the VB method	Abstract
5.4	Recycling Processed GaAs Wafers	Abstract
6.1	Integrated Opto-electronics	Abstract
6.2	Promise and Progress of GaAs MEMS and MOEMS	Abstract
6.3	Development Of Broadband Low-Voltage RF MEM Switches	Abstract
6.4	Germanium Devices: Hybrid Integration and Substrate Removal	Abstract
6.5	GaAs PHEMT and InP HEMT MMIC Requirements for Satellite Based Communications Systems	Abstract
7.2	Process Modelling and Simulation for GaAs P-HEMT Gate Improvement and Control	Abstract
7.3	Revitalization of Single Layer Lift-off For Finer Resolution and Challenging Topography	Abstract
7.4	Optical Lithographic Performance and Resolution Using Strong Dark-Field Phase-Shifting of Discrete Patterns	Abstract
7.5	A Very High Performance, High Yield, and High Throughput Millimeter Wave Power pHEMT Process Technology	Abstract
8.1	A Mixed GaAs Modulator and HEMT MMIC Process Line On 150mm Wafers	Abstract
8.2	High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers	Abstract
8.3	Process Optimization for RF Performance of Ion-Implanted E/D MESFETs	Abstract
8.4	Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application	Abstract
8.5	A Single Threshold Double Recessed pHEMT Process for economical Fabrication of High Performance Power Amplifiers and Low Noise Amplifiers at X-Band	Abstract
8.6	N-Minus Resistance Control for 6" GaAs MESFET Manufacturing	Abstract
8.7	Double distributed GaAs P-HEMT ICs for 40 Gbit/s high output voltage driver modules	Abstract
8.8	Innovative Metal Lift-off Process Using Dry Carbon Dioxide	Abstract
8.9	Development of a High Voltage mmW GaAs PIN Diode Switch	Abstract
9A.1	Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs	Abstract
9A.2	Power GaN-based Microwave Devices for Wireless Communications	Abstract
9A.3	Correlation of materials characteristics with microwave device performance in AlGaN high electron mobility transistors	Abstract
9A.4	Optimizing Light Emission from Nitride Quantum Wells	Abstract
9B.1	Heavily Doped InP-based HBTs for New Wireless and Fiber-optic Telecommunication Applications	Abstract
9B.2	InP HBT Production Process	Abstract
9B.2	High Density Plasma Etch Processes for the Manufacture of Optoelectronic Devices based on InP	Abstract
9B.4	InP Processing Using an HBr High Density ICP Plasma	Abstract

 

 

 

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