Conference

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2001 On-line Digest Table of Contents

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1_1	Trends in Microsystems for Information Technologies	Abstract
1_2	Applications of Compound Semiconductors in High Data Rate Optic Fiber Communications	Abstract
1_3	Capacity Issues in the Material Supply Chain	Abstract
1_4	RF Power GaAs for Wireless Infrastructure Markets	Abstract
10A_1	Challenges in Rapidly Scaling up Back-side Processing of GaAs Wafers	Abstract
10A_2	Simple Method for Calculating Backside Via Inductance	Abstract
10A_3	Backside Mounting Procedures for Semiconductor Wafer Processing	Abstract
10A_4	Reversible and Permanent Wafer Bonding for GaAs Processing	Abstract
10a_5	Film growth characterization of pulse electrodeposited Au/Sn thin films	Abstract
10b_1	InGaP Makes HBT Reliability a Non-Issue	Abstract
10b_2	A Correlation Between Beta Degradation at Room Temperature versus Beta Degradation at Stress Temperature for Determining the Reliability of HBTs	Abstract
10b_3	Identification of Humidity Related Failure Mechanisms in GaAs Based HBT's	Abstract
10b_4	On The Influence Of Implant Isolation And Base Contact Abnormalities On The Performance And Reliability Of InGaP/GaAs HBTs	Abstract
10B_5	Biased, Backside Failure Analysis Techniques for Small Plastic Packages	Abstract
11_1	Progress in GaAs-Based Metamorphic Technology	Abstract
11_3	High Performance Metamorphic HEMT with 0.25 µm Refractory Metal Gate on 4" GaAs Substrate	Abstract
11_4	Orientation Dependent Characteristics of Recessed-Gate InGaAs/AlGaAs HEMTs	Abstract
12_1	Reduction of Average Cycle Time at a Wafer Fabrication Facility	Abstract
12_2	The Development of a Custom, Paperless Shop Floor Control System for Efficient Manufacturing	Abstract
12_3	Systematics and Key Performance Indicators to Control a GaAs Volume Production	Abstract
12_4	"Overall Resource Effectiveness" the Key for Cycle Time Reduction & Capacity Improvements	Abstract
2_1	Thermal Management and Modeling of GaAs-based HBTs	Abstract
2_2	Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation	Abstract
2_3	Incorporation of an Alloy-Though Passivating-Ledge Process into a Fully Self-Aligned InGaP/GaAs HBT Process	Abstract
2_4	Pathway for HBT Turn-on Voltage Reduction on a GaAs Platform	Abstract
3_1	Cost-Effective Yield Enhancement in 6" Gallium Arsenide Wafer Manufacturing	Abstract
3_2	150mm Through Substrate Interconnect Conversion One Year Later	Abstract
3_3	MOVPE-Grown Enhancement Mode HIGFET on 150mm GaAs	Abstract
3_4	Dicing Improvements: Yield Enhancement, Throughput Increase and Die Size Reduction in M/A-COM's GaAs Fab	Abstract
5_1	Mass Production of Large-Size GaAs Wafers at FREIBERGER	Abstract
5_2	Large Diameter M-HEMT & InP-HEMT Epiwafers Grown in Multicharge MOVPE Reactors	Abstract
5_3	Manufacturing 6" GaAs substrates by the VB method	Abstract
5_4	Recycling Processed GaAs Wafers	Abstract
6_1	Integrated Opto-electronics	Abstract
6_2	Promise and Progress of GaAs MEMS and MOEMS	Abstract
6_3	Development Of Broadband Low-Voltage RF MEM Switches	Abstract
6_4	Germanium Devices: Hybrid Integration and Substrate Removal	Abstract
6_5	GaAs PHEMT and InP HEMT MMIC Requirements for Satellite Based Communications Systems	Abstract
7_2	Process Modelling and Simulation for GaAs P-HEMT Gate Improvement and Control	Abstract
7_3	Revitalization of Single Layer Lift-off For Finer Resolution and Challenging Topography	Abstract
7_4	Optical Lithographic Performance and Resolution Using Strong Dark-Field Phase-Shifting of Discrete Patterns	Abstract
7_5	A Very High Performance, High Yield, and High Throughput Millimeter Wave Power pHEMT Process Technology	Abstract
8_1	A Mixed GaAs Modulator and HEMT MMIC Process Line On 150mm Wafers	Abstract
8_2	High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers	Abstract
8_3	Process Optimization for RF Performance of Ion-Implanted E/D MESFETs	Abstract
8_4	Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application	Abstract
8_5	A Single Threshold Double Recessed pHEMT Process for economical Fabrication of High Performance Power Amplifiers and Low Noise Amplifiers at X-Band	Abstract
8_6	N-Minus Resistance Control for 6" GaAs MESFET Manufacturing	Abstract
8_7	Double distributed GaAs P-HEMT ICs for 40 Gbit/s high output voltage driver modules	Abstract
8_8	Innovative Metal Lift-off Process Using Dry Carbon Dioxide	Abstract
8_9	Development of a High Voltage mmW GaAs PIN Diode Switch	Abstract
9A_1	Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs	Abstract
9A_2	Power GaN-based Microwave Devices for Wireless Communications	Abstract
9A_3	Correlation of materials characteristics with microwave device performance in AlGaN high electron mobility transistors	Abstract
9A_4	Optimizing Light Emission from Nitride Quantum Wells	Abstract
9B_1	Heavily Doped InP-based HBTs for New Wireless and Fiber-optic Telecommunication Applications	Abstract
9B_2	InP HBT Production Process	Abstract
9B_2	High Density Plasma Etch Processes for the Manufacture of Optoelectronic Devices based on InP	Abstract
9B_4	InP Processing Using an HBr High Density ICP Plasma	Abstract