Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application

Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application
JianJang Huang, M. Hattendorf, Milton Feng
Center for Compound Semiconductor Microelectronics
Department of Electrical and Computer Engineering
The University of Illinois at Urbana-Champaign

Quesnell Hartmann and David Ahmari
Epiworks, Inc.

To meet the requirement for today's 2.4GHz high power circuit applications, we designed and processed high power heterojunction bipolar transistors (HBTs). The InGaP/GaAs HBTs with current gain
52.2, BV_CEO=16.1V, BV_BCO=24.6V, f_t=39GHz and f_max=139GHz were achieved from a 3x10 µm² emitter contact. The performance meets the specifications required.