GaAs ManTech On-Line Digest Search

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

1997 On-line Digest Table of Contents

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SESSION I: PLENARY

1.1

GaAs HBT RF UCs for Wireless Applications A Profitable Business

 

David A. Norbury
RF Micro Devices

1.2

An Overview of Local Multipoint Communications Systems

 

James W. McCoy and D. Gary Lerude
Texas Instruments, Inc.

SESSION II: PROCESING I
Chair: Stacey Bui, TRW Space & Electronics

2.1

A Comparison of InAs/GaAs Suplerlattice Etch Rates and Photoresist Undercutting for Nan-Alloyed Ohmic Contacts Using a Citric Acid: Hydrogen Peroxide Etchant

 

Carl Pettiford, Charles Havasy, Christopher Bozada, Charles Cerny, Gregory DeSalvo, Ross Dettmer, John Ebel, James Gillespie, Thomas Jenkins, Kenichi Nakano, Tony Quach, James Sewell, G. David Via
Wright-Patterson AFB

2.2

Threshold Voltage Control of the GaAs MESFET by Varying Dummy Gate Opening during Recess Etching

 

Chang-Tae Kih, Won-Sang Lee and Ki-Woong Chung
LG Electronics Research Center

2.3

Optimization of V-Band Power pHEMT Device Performance by AFM

 

E.S. Ponti, M. Hu, J.J. Brown, L.D. Nguyen, J.J. Vajo, M.V. Le, M.D. Wetzel
Hughes Research Laboratories

2.4

Impact of Gate Recess Profile on GaAs Microwave Device Performance Using AFM

 

Milton Tam, Marcus King, C.S. Wu, Mike Sanna, Hal Edwards, Rudye McGlothin
Texas Instruments, TRW

SESSION III: MANUFACTURING I

Chair: Wayne Kennan, Fujitsu Compound Semiconductor, Inc

3.1

Bump Technologies for GaAs Interconnection

 

C.L. Pillote, M.E. Grupen-Shemansky, S.P. Beaudoin, T.S. Cale
Snell & wilmer LLP, Motorola, Inc., Arizona State University

3.2

Manufacturing GaAs – Based Solar Cells

 

F. Ho, Y.C.M. Yeh, S. Khemthong and M. Yang
TECSTAR/Applied Solar Division

3.3

More for Less: Die Cost Reduction Through Shrink

 

L.S. Klingbeil, M.R. Wilson, C.D. Della
Motorola Semiconductor Products

3.4

Manufacturability of 0.25 um-Gate pHEMPT X-Band Power Amplifiers on 50 um-Thick GaAs Substrates with Rectangular Via Holes

 

Paul Harris, David Boone, Marcus King, John Stidham, Glen Bronson, Ken Decker, Saligrama Subbarao
Texas Instruments

SESSION IV: RELIABILITY I
Chair: Zaher Bardai, Hughes Microelectronics

4.1

Reliability of GaAs-based Heterojunction Bipolar Transistors

 

T. Hunderson, W.L. Chen, M. Sanna
Texas Instruments

4.2

PHEMT Reliability: The Importance of RF Life Testing

 

L. Aucoin, M. Benedek, M.Cobb, G. Kelley
Raytheon Advanced Device Center

4.3

Direct Observation of Field Enhanced Degradation in PHEMTs

 

J.I. Malin, C.S. Wu, S. Hillard, C. Fuller, P. Basham, K. Decker
Texas Instruments

4.4

Ti—Gate Metal Induced PHEMT Degradation in Hydrogen

 

P:.C. Chao, W. Hu H. DeOrio, A.W. Swanson

Sanders, Lockheed Martin Co.

SESSION V: DEVICES
Chair: Yoon Soo Park, Office of Naval Research

5.1

Millimeter-Wave Monolithic IC Technology for 60 GHz Application

 

Yuu Watanabe, Naofumi Okubo
Fujitsu Laboratories, Inc.

5.2

Power PHEMTs – Beyond Power and Efficiency

 

M. Schindler, D. Teeter, A. Platzker, S. Bouthillette, J. Griffiths, K. Kessler, A. Forbes
Raytheon Microelectronics Research Laboratories

5.3

Comparison of Ka-B and LNA Performance Using Ion Implanted MESFET and p-HEMT Processes

 

A.Kurdoghlian, K.N. Fry, G. Luong, D. Hou, M. Sokolich, W. Lam, C.D. Chang, Z. Bardai
Hughes Aircraft Company

5.4

Collector Thickness Effects on the Performance and Manufacturability of InGaP/GaAs HBTs

 

D.A. Ahmari, M.T. Fresina, Q.J. Hartmann, D.W. Barlage, M. Fend, G.E. Stillman
University of Illinois

5.5

Epitaxy-on-Electronics: Building Monolithic OEICs on Commercial GaAs VLSI

 

J. F. Ahadian, S.G. Patterson, P.T. Vaidyanathan, Y. Royter, D. Mull, G.S. Petrich, W.D. Goodhue, S. Prasada, L.A. Kolodziejski, C.G. Fonstad, Jr.

 

Massachusetts Institute of Technology, Northeaster University, University of Massachusetts

5.6

Monolithically Integrated Optoelectronic Receivers and Transmitters on GaAs-Wafers

 

T. Jakobus, W. Bronner, A. Gaymann, F. Grotjahn, J. Hornung, V. Hurm, K. Kohler, M. Ludwig, Z.G. Want
Franhofer-Institute

SESSION VI: PROCESS II
Chair: Bruce Bernhardt, Motorola

6.1

Micromaching of High Performance Circuits for Microwave and Millimeter-wave Applications

 

Chuck Goldsmith, Susan Exhelman, John Randall, Zhimin Yao, Ted Moise, David Denniston, Shea Chen, Mary Avery
Texas Instruments Inc.

6.2

Single Layer Integrated Metal Field Effect Transistor (SLIMFET) Process Using a GaAs Secondary Mask

 

T. Quach, C. Bozada, D. DeSalvo, C. Cerny, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy, T. Jekins, K. Nakano, C. Pettiford, J. Sewell, G.D. Via
Wright-Patterson AFB

6.3

Development of a Manufacturable MESFET for 3V Wireless Applications

 

M.L. Balzan, R.J. Crampton, W.F. Polhamus, R.A. Sadler
ITT GTS, Cree Research, Inc.

6.4

Modeling Emitter Ledge Behavior in AlGaAs/GaAs HBTs

 

M. Wetzel, M.C. Ho, P. Asbeck, P. Zampardi, C.Chang, C. Farley, M.F. Chang
University of California, San Diego, Rockwell International

6.5

The Evolution of GPS Receivers at Rockwell International Over Two Decades, and the Role of GaAs

 

Loney R. Duncan
Rockwell International Corporation

SESSION VII: Processing III
Chairs: Greg Fung, Watkins-Johnson

7.1

High Quality and High Uniformity Activation of Si Implanted GaAs by Rapid Thermal Processing Using Ceramics AIN Susceptors

 

Shigeki Yamaga, Bunji Hisamori, Chikao Kimura
New Japan Radio Co., Ltd.

7.2

Factors Influencing Silicon Nitride Fracturing and Delamination In GaAs Devices

 

M.L. Balzan, J.W. Crites, J.W.L. Dilley
ITT Industries

7.3

Improvement of Furnace Annealing Process to Suppress Slipline Generation

 

Y. Saito, S. Nakajima, T. Ueda, M. Kuroda
Sumitomo Electric Industries, Ltd.

SESSION VIII: Interactive Forum
Chair: Ding Day, Hewlett Packard

8.1

Manufacturability of the InGaP/GaAs HBT Dual Etch-Stop Emitter Ledge (DESL)

 

M.T. Fresina, Q.J. Hartmann, D.A. Ahmari, D.W. Barlage, M. Heins, M. Feng, G.E. Stillman
University of Illinois

8.2

Manufacturable Solution for Low-Cost Millimeter-Wave IC’s

 

H. Hsia J.R. Middleton, R. Shimon, D. Scherrer, M. Heins, D. Caruth, J. Fendrich, M Feng
University of Illinois at Urbana-Champaign

8.3

Power Slump, Hydrogen Degradation, or Gate Lag – Pick Your Enemy

 

R.E. Leoni III, J.C. M. Hwang
Lehigh University, Microwave Technology, Inc.

8.4

Taguchi Tollerance Analysis of MMICs

 

S.P. Marsh, S.D. Wadsworth
GEC Marconi Materials Technology

8.5

Qualifying Second Source pHEMT Wafers

 

R. Lee, L.D. Hou, P. Chu, M. Cole, C.K. Pao, C.D. Chang, T.A. Midford
Hughes Aircraft Company

8.6

VGF GaAs for Ion-Implantation: 1 Year Later

 

M.J. Brophy
TriQuint Semiconductor

8.7

Silicon Oxide PECVD Process Transfer from Reinberg to Shower-Head System

 

J.W. Crites, M.J. Drinkwine, W.F. Polhamus
ITT-GTC

8.8

Miniature Surface Mount Plastic Packages for High Frequency Low Noise Transistors

 

Antoni C. Niedzwiecki, Frank B. Babbit, Jr. Charles R. Baughman, Pagtrick Chye, Jay Dehkordi, Michael Frank
Hewlett-Packard Company

8.9

Planar Doping Level Control of PHEMT Material by Electrochemical Capacitance-Voltage Profiling Technique

 

X. Du, R.E. Leoni, J.C. M. Hwang, T.L. Hierl
Lehigh University, Quantum Epitaxial Designs, Inc.

SESSION IX: MANUFACTURING II
Chairs: Malcol Stubbs, Communications Research Centre

9.1

DOE or Statistical Engineering?

 

Peter D. Shainin
Shainan Consultants, Inc.

9.2

A production FET modeling and library generation system (FLAMBE: Fast Library and Model Building Engine)

 

Don McGinty, David E. Root, Julio Perdomo

9.3

Plastic Air Cavity Encapsulation Process

 

Jong Tae Kim, Ki Sung Ham, Chan IK Park
CTI Semiconductor Corporation

9.4

GaAs Cost Drivers and an Approach to Achieving Low Cost Products

 

T. Cordner
Texas Instruments

SESSION X: Panel
Chair: Jim Gillespie, Wright Laboratory

SESSION XI: MATERIALS
Chairs: Thomas Anderson, Airtron

11.1

III-V Manufacturing Material Issues for Wireless Communications

 

C.W. Farley, D.L. Green, K. Hong, D.J. Halchin
Rockwell Semiconductor Systems

11.2

Comparison of MOCVD and MBE for GaAs-AlGaAs HBT Manufacturing

 

Dwight C. Sgtreit, Aaron K. Oki, Thomas R. Block, Michael Wojtowicz, Frank Yamada, Matthew M. Hoppe
TRW Electronic Systems and Technology Division

11.3

The Effect of Substrate Parameters on the Growth of P-HEMT Wafers by Molecular Beam Epitaxy

 

W.E. Quinn, B. Lauterwasser, J. Kronwasser, T. Mirandi, D. Carlson
Ratheon Advanced Device Center, M/A-COM, Inc.

11.4

Indium Precision During the Manufacture of AlGaAs/InGaAs/GaAs p-HEMTs

 

Forrest Hellert, James Chang, George Patterson
Hewlett-Packard Company

Session XII: RELIABILITY II
Chair: Walter Bloss, Aerospace

12.1

Production Screening for Power Slump Tendency of MESFETs

 

M.S. Shirokov, R.E. Leoni and J.C. M. Hwang, M. Omori
Hehigh University, Microwave Technology, Inc.

12.2

The Extraction of Projected Operating Lifetime from Accelerated Stressing of a Single Device

 

Bob Yeats
Hewlett Packard